-
Time：2021-12-29
。。 Original name: Plato and the nerd: the creative partnership of humans and technology 。。ISBN: 9787521714241 。。 Content introduction.. This is a book that breaks the boundaries of disciplines, breaks through the fields of engineering technology and information science, fully integrates human cognitive experience, and analyzes the symbiotic relationship between information technology reform and human cognition […]
-
Time：2021-12-27
With the rapid development of semiconductor technology, various memories have been introduced one after another, and the performance has been continuously improved. As we all know, the data in the ordinary SRAM disappears immediately after the power supply is powered off. After power on again, the data in the memory is a random number. This […]
-
Time：2021-12-25
SRAM can save the data stored in it without refreshing the circuit. SRAM has high performance and low power consumption. SRAM is mainly used for L2 cache. It uses transistors to store data. However, SRAM also has its disadvantages, low integration. DRAM memory with the same capacity can be designed as a small volume, but […]
-
Time：2020-11-30
Back to the catalog 1. Basic working principle Because the efficiency of class a amplifier is too low, it is usually only used for small power amplification or signal amplification. Class B (class B) or class A (class AB) power amplifier is really used for high power amplification. Class B power amplifier is characterized by […]
-
Time：2020-11-1
Although Apple‘s fall launch did not feature the iPhone, the A14 chip was released along with the iPad air 4. Apple’s 5nm A14 bionic has a six core CPU and a new four core GPU, integrating 11.8 billion transistors. A14 improves the performance of the iPad air 4 by 40%. World’s first 5nm chip, CPU […]
-
Time：2020-10-16
A new innovative technology called universal selector will significantly improve the capabilities of existing and emerging storage technologies, including MRAM, DRAM and ReRAM, as it will provide a novel way to design vertical cell transistors to achieve higher levels of performance, reliability and density. The general-purpose selector of spin memory is a selective vertical epitaxial cell […]
-
Time：2020-9-6
Many of the recent memory problems appear in the form of 3D xpoints on ReRAM, MRAM and PCRAM. But ferroelectric RAM (FRAM) has been successful in small niche devices.Last year’s annual report on emerging memory, touted the three key emerging memories of ReRAM, MRAM and PCRAM. But it also points out that fram has proven […]
-
Time：2020-9-2
SRAM is a “free” memory available in any CMOS process. Since the birth of CMOS, SRAM has been the driving force for the development and manufacturing of any new CMOS process. With the latest so-called “deep learning domain specific domain architecture” (DSA), the number of SRAMs on each chip has reached hundreds of megabits. This […]
